2n2222a smd datasheet pdf storage

Page 2 of 3 electrical characteristics t ambient25. Storage time vcc 30 vdc, ic 150 madc, i i 15 ad fi 2 ts 225 ns fall time b1 ib2 15 madc figure 2 t f 60 ns 1. Semiconductor components industries, llc, 2000 november, 2000 rev. Mmbt2222a on semiconductor fairchild mouser europe. Thermal data symbol parameter lcc3 and ub value unit rthjspis thermal resistance junctionsolder pad infinite sink max for jans 90 cw rthja thermal resistance junctionambient. Amplifier transistors npn silicon maximum ratings rating symbol value unit collectoremitter voltage vceo 40 vdc collectorbase voltage vcbo 75 vdc emitterbase voltage vebo 6. A listing of scillcs productpatent coverage may be accessed at. Pn2222 datasheet, equivalent, cross reference search. Please consult the most recently issued document before initiating or completing a design. Package demensions 2000 fairchild semiconductor international rev.

Storage time v cc 30 vdc, ic 150 madc, ts 225 ns fall time 30 vdc, i 150 madc, ib1 ib2 15 madc figure 2 t. Operating junction temperature 175 oc to18 to39 17 obsolete products obsolete products. Sot233 smdsmt npn 2 a bipolar transistors bjt, dual smdsmt pnp bipolar transistors. Fall time ic, collector current ma 20 30 50 70 100 10 5. The smd versions of the 2n2222 are available as the bcw65 sot23, fmmt2222. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. Aah 200711 mmbt2222a smd general purpose transistor npn. Pn2222d pn2222, pn2222a pn2222a is a preferred device. Specifications may change in any manner without notice. Description symbol 2n2222a unit collector emitter voltage vceo 40 v collector base voltage vcbo 75 v emitter base voltage vebo 6. Power mosfet irfp250, sihfp250 vishay siliconix features. Ta25c symbol units collectorbase voltage vcbo 40 v collectoremitter voltage vces 40 v. Npn switching transistor in a sot23 plastic package.

Off time switching time equivalent test circuits scope rise time storage temperature. If requesting lead pb free plated devices, add the suffix pbfree to the part. Nxp semiconductors product data sheet npn switching transistor mmbt2222a data sheet status notes 1. A, february 2000 bd579 dimensions in millimeters 8. Compare pricing for microsemi 2n2222a across 12 distributors and discover alternative parts, cad models, technical specifications, datasheets, and more on octopart. Free packages are available maximum ratings rating symbol value unit collector.

Advance information formative or in design this datasheet contains the design specifications for product development. Datasheet identification product status definition. When it comes to thermal conduction, metal always beats plastic. And the maximum dissipation for a metal cased 2n2222a is 600mw. The product status of devices described in this document may have changed since this document was published and may differ in case of multiple devices. The central semiconductor 2n2369a is a silicon epitaxial planar npn transistor designed for ultra high speed saturated switching applications. Storage time vcc 30 vdc, ic 150 madc, ib1 ib2 15 madc figure 2 ts. Pn2907 mmbt2907 pnp generalpurpose transistor absolute maximum ratings1,2 stresses exceeding the absolute maximum ratings may damage the device. Pn2222a mmbt2222a pzt2222a npn general purpose amplifier.

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